Analysis of GCT temperature characteristics

Temperature performances on gate commutated thyristor characteristics were investigated. The temperature dependency in blocking, on-state and turn-off, have been analyzed. Temperature influence on safe operating area has also been discussed. The results from simulator ISE-TCAD agree well with the proposed theoretic analysis. It shows that the presented temperature dependency mechanism is reasonable and helpful to trade-off for thermal and SOA in IGCT application.

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