Low temperature atomic layer deposition of titania thin films

Abstract This paper presents a comprehensive study of atomic layer deposition of TiO 2 films on silicon and polycarbonate substrates using TiCl 4 and H 2 O as precursors at temperatures in the range 80–120 °C. An in-situ quartz crystal microbalance was used to monitor different processing conditions and the resultant films were characterised ex-situ using a suite of surface analytical tools. In addition, the contact angle and wettability of as-deposited and UV irradiated films were assessed. The latter was found to reduce the contact angle from ≥ 80° to

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