Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.
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Young Joon Hong | Gyu-Chul Yi | Miyoung Kim | Jong-Myeong Jeon | Sung Soo Park | Jong Min Kim | Sun Il Kim | Chan Wook Baik | Jun Hee Choi | Yong-Jin Kim
[1] K. Kim,et al. GaN Films Deposited by DC Reactive Magnetron Sputtering , 2004 .
[2] Jürgen Christen,et al. Bound exciton and donor–acceptor pair recombinations in ZnO , 2004 .
[3] Young Joon Hong,et al. Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications , 2009 .
[4] Pierre Gibart,et al. Epitaxial Lateral Overgrowth of GaN , 2001 .
[5] Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures , 2004 .
[6] Gyu-Chul Yi,et al. ZnO nanostructures with controlled morphologies on a glass substrate , 2010, Nanotechnology.
[7] T. Araki,et al. Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE) , 1998 .
[8] Zhong‐Lin Wang,et al. Wafer‐Level Patterned and Aligned Polymer Nanowire/Micro‐ and Nanotube Arrays on any Substrate , 2009 .
[9] M. Kneissl,et al. Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates , 2000 .
[10] Young Joon Hong,et al. Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes , 2009 .
[11] Liwei Lin,et al. Localized heating induced chemical vapor deposition for one-dimensional nanostructure synthesis , 2010 .
[12] S. J. Pearton,et al. High mobility InGaZnO4 thin-film transistors on paper , 2009 .
[13] Marc Ilegems,et al. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers , 1971 .
[14] Shuji Nakamura,et al. The blue laser diode-the complete story , 2000 .
[15] S. Pennycook,et al. ZnO Nanoneedles Grown Vertically on Si Substrates by Non‐Catalytic Vapor‐Phase Epitaxy , 2002 .
[16] Bruce W Wessels,et al. Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities , 1999 .
[17] Chang-Hee Hong,et al. Magnesium acceptor levels in GaN studied by photoluminescence , 1998 .
[18] M.C. Kim,et al. Nonvolatile-Memory Characteristics of $\hbox{AlO}^{-}$ -Implanted $\hbox{Al}_{2}\hbox{O}_{3}$ , 2009, IEEE Electron Device Letters.
[19] Peidong Yang,et al. Nanowire dye-sensitized solar cells , 2005, Nature materials.