Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method.

We report on the fabrication of high-quality GaN on soda-lime glass substrates, heretofore precluded by both the intolerance of soda-lime glass to the high temperatures required for III-nitride growth and the lack of an epitaxial relationship with amorphous glass. The difficulties were circumvented by heteroepitaxial coating of GaN on ZnO nanorods via a local microheating method. Metal-organic chemical vapor deposition of ZnO nanorods and GaN layers using the microheater arrays produced high-quality GaN/ZnO coaxial nanorod heterostructures at only the desired regions on the soda-lime glass substrates. High-resolution transmission electron microscopy examination of the coaxial nanorod heterostructures indicated the formation of an abrupt, semicoherent interface. Photoluminescence and cathodoluminescence spectroscopy was also applied to confirm the high optical quality of the coaxial nanorod heterostructures. Mg-doped GaN/ZnO coaxial nanorod heterostructure arrays, whose GaN shell layers were grown with various different magnesocene flow rates, were further investigated by using photoluminescence spectroscopy for the p-type doping characteristics. The suggested method for fabrication of III-nitrides on glass substrates signifies potentials for low-cost and large-size optoelectronic device applications.

[1]  K. Kim,et al.  GaN Films Deposited by DC Reactive Magnetron Sputtering , 2004 .

[2]  Jürgen Christen,et al.  Bound exciton and donor–acceptor pair recombinations in ZnO , 2004 .

[3]  Young Joon Hong,et al.  Structural and optical characteristics of GaN/ZnO coaxial nanotube heterostructure arrays for light-emitting device applications , 2009 .

[4]  Pierre Gibart,et al.  Epitaxial Lateral Overgrowth of GaN , 2001 .

[5]  Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures , 2004 .

[6]  Gyu-Chul Yi,et al.  ZnO nanostructures with controlled morphologies on a glass substrate , 2010, Nanotechnology.

[7]  T. Araki,et al.  Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE) , 1998 .

[8]  Zhong‐Lin Wang,et al.  Wafer‐Level Patterned and Aligned Polymer Nanowire/Micro‐ and Nanotube Arrays on any Substrate , 2009 .

[9]  M. Kneissl,et al.  Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates , 2000 .

[10]  Young Joon Hong,et al.  Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes , 2009 .

[11]  Liwei Lin,et al.  Localized heating induced chemical vapor deposition for one-dimensional nanostructure synthesis , 2010 .

[12]  S. J. Pearton,et al.  High mobility InGaZnO4 thin-film transistors on paper , 2009 .

[13]  Marc Ilegems,et al.  Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers , 1971 .

[14]  Shuji Nakamura,et al.  The blue laser diode-the complete story , 2000 .

[15]  S. Pennycook,et al.  ZnO Nanoneedles Grown Vertically on Si Substrates by Non‐Catalytic Vapor‐Phase Epitaxy , 2002 .

[16]  Bruce W Wessels,et al.  Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities , 1999 .

[17]  Chang-Hee Hong,et al.  Magnesium acceptor levels in GaN studied by photoluminescence , 1998 .

[18]  M.C. Kim,et al.  Nonvolatile-Memory Characteristics of $\hbox{AlO}^{-}$ -Implanted $\hbox{Al}_{2}\hbox{O}_{3}$ , 2009, IEEE Electron Device Letters.

[19]  Peidong Yang,et al.  Nanowire dye-sensitized solar cells , 2005, Nature materials.