HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy

In situ measurements of HBr concentrations and rotational temperatures were recorded in a 300 mm planar inductively coupled plasma (ICP) etch reactor using diode laser wavelength modulation spectroscopy. A pair of diode lasers operating near 1.95 and 2.00 μm were wavelength tuned over the R(7) and P(2) transitions of HBr (2–0 band), time-division multiplexed, and directed through an industrial wafer etch reactor. The rotational temperature (typically 435±8 K) was determined from the ratio of peak absorption signals and the HBr concentration was determined from the measured temperature and absorbance from a single line. The measured rotational temperature in the plasma was relatively independent of conditions studied. The estimated HBr dissociation fraction ranged from 25%–60%, depending on the ICP power applied, gas flow rate, and chamber pressure. Decreases in HBr concentration were detected 1 cm above the wafer surface during blank silicon wafer etching. The HBr dissociation fractions were measured befo...

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