Nitride-based lasers: advances in cavity design
暂无分享,去创建一个
Amber C. Abare | Steven P. DenBaars | Tal Margalith | Evelyn L. Hu | A. R. Stonas | Monica A. Hansen | Michael P. Mack | Larry A. Coldren | Oded Buchinsky | Daniel A. Cohen | L. Coldren | S. Denbaars | T. Margalith | E. Hu | M. Mack | D. Cohen | A. Stonas | A. Abare | O. Buchinsky | M. Hansen
[1] David R. Clarke,et al. PHOTOLUMINESCENCE FROM LASER ASSISTED DEBONDED EPITAXIAL GAN AND ZNO FILMS , 1999 .
[2] Masayuki Ishikawa,et al. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates , 1996 .
[3] K. Boutros,et al. Facet roughness analysis for InGaN/GaN lasers with cleaved facets , 1998 .
[4] Catalano,et al. Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.
[5] Shuji Nakamura,et al. InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours , 1998 .
[6] Michael Kneissl,et al. Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching , 1998 .
[7] Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD , 1997 .
[8] L. Coldren,et al. Measurement of gain current relations for InGaN multiple quantum wells , 1998 .
[9] Akito Kuramata,et al. InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy , 1997 .