Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

Ultrafast all-optical cross phase modulation (XPM) was enhanced in the InGaAs/AlAsSb coupled quantum wells using new InAlAs coupling barrier. Furthermore, a high XPM efficiency of 0.15 rad/pJ, which is approximately three times as large as that of a previous sample with the AlAs coupling barrier, was obtained by realizing the strong optical confinement in a narrower waveguide. From the analysis of the quantum levels and the measurement of the absorption spectra, the enhanced XPM efficiency was suggested to be contributed by the refractive index dispersion of the interband transition that was modulated by the intersubband transitions (ISBTs). This large XPM efficiency is expected to give a higher performance in Mach-Zehnder interferometer-type ultrafast all-optical switch.

[1]  G. Cong,et al.  Mechanism of ultrafast modulation of the refraction index in photoexcited In x Ga 1 − x As / AlAs y Sb 1 − y quantum well waveguides , 2008 .

[2]  Kei Kaneko,et al.  Polarization dependent loss in III-nitride optical waveguides for telecommunication devices , 2006 .

[3]  O. Wada,et al.  Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using novel InGaAs-AlAsSb-InP coupled double quantum well structure for intersubband transitions , 1999 .

[4]  James S. Harris,et al.  Intersubband absorption saturation study of narrow III - V multiple quantum wells in the spectral range , 1997 .

[5]  Katsumi Kishino,et al.  Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm , 2002 .

[6]  Akio Sasaki,et al.  All‐optical modulation using an n‐doped quantum‐well structure , 1990 .

[7]  Shu Namiki,et al.  All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well , 2007 .

[8]  Hiroshi Ishikawa,et al.  Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells. , 2007, Optics letters.

[9]  T. Mozume,et al.  All-optical switching using ultrafast intersubband transitions in InGaAs/AlAsSb coupled triple quantum well structures , 1999, Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464).

[10]  Toshifumi Hasama,et al.  λ∼1.49–3.4μm intersubband absorptions in (CdS∕ZnSe)∕BeTe quantum wells grown by molecular beam epitaxy , 2006 .

[11]  H. Ishikawa,et al.  Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells , 2007, IEEE Photonics Technology Letters.

[12]  M. Kudo,et al.  1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy , 1999 .

[13]  Hiroshi Ishikawa,et al.  Ultrafast All-Optical Refractive Index Modulation in Intersubband Transition Switch Using InGaAs/AlAs/AlAsSb Quantum Well , 2007 .