论文信息 - Carbon contamination free Ge(100) surface cleaning for MBE

Carbon contamination free Ge(100) surface cleaning for MBE

Abstract A carbon free wet treatment for Ge(100) surface has been proposed. This treatment consists of three steps: (1) several cycles of surface oxidation with H 2O 2 solution and the oxide etching with HCl solution, (2) the formation of protective oxide by NH 4OH/H 2O 2/H 2O treatment and (3) thermal desorption of the protective oxide in ultra high vacuum. An atomic force microscope image of the Ge(100) surface after step (1) indicates the surfaces is very smooth. After step (2), it is confirmed that the protective oxide contains no carbon contamination by Auger electron spectroscopy measurement. A reflection high energy electron diffraction pattern indicates that the surface, after step (3), has only atomic-scale steps.

[1] H. Akazawa. Kinetics of Si growth on Ge(100) in Si2H6 gas-source molecular beam epitaxy and low-pressure chemical vapor deposition , 1995 .

[2] J. Bean,et al. An efficient method for cleaning Ge(100) surface , 1994 .

[3] Raphael Tsu,et al. Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning , 1993 .

[4] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[5] T. Akane,et al. Preparation of high-quality Ge substrate for MBE , 1997 .

[6] Peter R. Norton,et al. The S‐passivation of Ge(100)‐(1×1) , 1995 .

[7] Yasuhiro Shiraki,et al. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .