600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology

Reverse conducting IGBTs are fabricated in a large productive volume for soft switching applications, such as inductive heaters, microwave ovens or lamp ballast, since several years. To satisfy the requirements of hard switching applications, such as inverters in refrigerators, air conditioners or general purpose drives, the reverse recovery behavior of the integrated diode has to be optimized. Two promising concepts for such an optimization are based on a reduction of the charge- carrier lifetime or the anti-latch p+ implantation dose. It is shown that a combination of both concepts will lead to a device with a good reverse recovery behavior, low forward and reverse voltage drop and excellent over current turn- off capability of a trench field-stop IGBT.

[1]  Hellmund,et al.  1200V Reverse Conducting IGBTs for Soft-Switching Applications , 2005 .

[2]  L. Lorenz,et al.  LightMOS a new power semiconductor concept dedicated for lamp ballast application , 2003, 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003..

[3]  Gerhard Schmidt,et al.  600V-IGBT3: trench field stop technology in 70 /spl mu/m ultra thin wafer technology , 2003, ISPSD 2003.

[4]  H. Takahashi,et al.  1200V reverse conducting IGBT , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

[5]  T. Laska,et al.  The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).