论文信息 - High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2 - 字舞流文

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Y. Hao | Tangsheng Chen | Jincheng Zhang | Jing Ning | Shenglei Zhao | Yi Wang | Kai Zhang | Hong Zhou | Xiaoling Duan | Tao Zhang | Yachao Zhang | Zhaoke Bian | Kui Dang