论文信息 - 150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors - 字舞流文

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

M. Lanza | F. Hui | Lin Jiang | Yuanyuan Shi | F. Palumbo | Xianhu Liang | B. Yuan | X. Jing | Shaochuan Chen | Liubiao Zhong | M. A. Villena