论文信息 - Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure

Some characteristics of the GaAs/GaAlAs graded‐index separate‐confinement heterostructure quantum well laser structure

We describe the characteristics of graded‐index separate‐confinement heterostructure (GRIN‐SCH) quantum well laser structures for a wide range of quantum well thickness and graded layer composition. It was deduced that the ‘‘GRIN’’ region enhances carrier confinement and assists the thermalization of carriers into the quantum well. A maximum value of T0 of 190 K was measured for these single quantum well lasers.

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