Temperature effect on delay for low voltage applications [CMOS ICs]

This paper presents one of the first analysis of the temperature dependence of CMOS integrated circuit delay at low voltage. Based on a low voltage extended Sakurai's /spl alpha/-power current law, a detail analysis of the temperature and voltage sensitivity of CMOS structure delay is given. Coupling effects between temperature and voltage are clearly demonstrated. Specific derating factors are defined for the low voltage range (1-3 V/sub TO/). Experimental validations are obtained on specific ring oscillators integrated on a 0.7 /spl mu/m process by comparing the temperature and voltage evolution of the measured oscillation period to the calculated ones. A low temperature sensitivity operating region has been clearly identified and appears in excellent agreement with the expected calculated values.

[1]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2]  Abhijit Chatterjee,et al.  A submicron DC MOSFET model for simulation of analog circuits , 1995, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[3]  Mohamed I. Elmasry,et al.  Power dissipation analysis and optimization of deep submicron CMOS digital circuits , 1996, IEEE J. Solid State Circuits.

[4]  Mohamed A. Osman,et al.  An extended Tanh law MOSFET model for high temperature circuit simulation , 1995 .

[5]  J. E. Smith Low voltage standard (for logic design) , 1992, [1992] Proceedings. Fifth Annual IEEE International ASIC Conference and Exhibit.

[6]  Jean Michel Daga,et al.  Delay modelling improvement for low voltage applications , 1995, Proceedings of EURO-DAC. European Design Automation Conference.

[7]  Anantha P. Chandrakasan,et al.  Low Power Digital CMOS Design , 1995 .

[8]  Shih-Wei Sun,et al.  Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation , 1995 .

[9]  Alan Mathewson,et al.  An investigation of MOSFET statistical and temperature effects , 1992, ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.

[10]  Changhae Park,et al.  Reversal of temperature dependence of integrated circuits operating at very low voltages , 1995, Proceedings of International Electron Devices Meeting.

[11]  Kjell Jeppson,et al.  Modeling the influence of the transistor gain ratio and the input-to-output coupling capacitance on the CMOS inverter delay , 1994 .

[12]  J. Daga,et al.  Inverter delay modelling for submicrometre CMOS process , 1996 .