Proper Orthogonal Decomposition for Flow Calculations and Optimal Control in a Horizontal CVD Reactor

Abstract : Chemical vapor deposition (CVD) processes use a chemical reaction in the gas phase above the surface of the film to deposit desired materials onto a susceptor. CVD is a key element in a wide variety of industrial applications, ranging from the fabrication of microelectronic circuits, solar cells, and optical devices to the deposition of wear resistant coatings onto high performance machine tools. In a typical CVD reactor, a mixture of reactants and carrier gas is forced to flow across a heated susceptor. The temperature field from the heated susceptor induces gas phase reactions to produce activated species which then diffuse to the surface reaction layer and decompose to produce a thin film.

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