Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains
暂无分享,去创建一个
J. R. Schwank | S. E. Swanson | G. Vizkelethy | D. McMorrow | T. A. Hill | R. S. Flores | P. E. Dodd | S. M. Dalton | M. R. Shaneyfelt
[1] Daniel M. Fleetwood,et al. Implementing QML for radiation hardness assurance , 1990 .
[2] D.L. Hansen,et al. Clock, Flip-Flop, and Combinatorial Logic Contributions to the SEU Cross Section in 90 nm ASIC Technology , 2009, IEEE Transactions on Nuclear Science.
[3] M. Liu,et al. A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal , 2010, IEEE Transactions on Nuclear Science.
[4] Marty R. Shaneyfelt,et al. BUSFET-a radiation-hardened SOI transistor , 1999 .
[5] Teresa Farris,et al. Radiation Hardness Characterization of a 130nm ASIC Library Technology , 2010, 2010 IEEE Radiation Effects Data Workshop.
[6] R A Reed,et al. Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS , 2010, IEEE Transactions on Nuclear Science.
[7] Barney Lee Doyle,et al. Nuclear microprobe imaging of single-event upsets , 1992 .
[8] R.C. Baumann,et al. Radiation-induced soft errors in advanced semiconductor technologies , 2005, IEEE Transactions on Device and Materials Reliability.
[9] D. S. Walsh,et al. SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments , 2001 .
[10] Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs , 2011, IEEE Transactions on Nuclear Science.
[11] N. Seifert,et al. Chip-level soft error estimation method , 2005, IEEE Transactions on Device and Materials Reliability.
[12] S. M. Dalton,et al. SOI substrate removal for SEE characterization: Techniques and applications , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.
[13] R. Baumann. The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction , 2002, Digest. International Electron Devices Meeting,.
[14] Bin Li,et al. Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell , 2011, IEEE Transactions on Nuclear Science.