论文信息 - High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers

High-uniformity waveguide-integrated metal-semiconductor-metal germanium photodetector with sige capping layer and its application to differential receivers

Differential pairs of metal-semiconductor-metal (MSM) germanium (Ge) photodetectors (PDs) with an epitaxially-tuned silicon germanium (SiGe) capping layer are fabricated. PDs with high responsivity (1.0 A/W) and low dark current (33 mA/cm2) are obtained, and low-noise characteristics and 10 Gbps data transmission is confirmed in the differential MSM PDs.

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