论文信息 - Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures - 字舞流文

Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures

N. Holonyak | D. Nam | P. Gavrilovic | L. Guido | W. E. Plano | J. Baker | R. D. Burnham