Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

Increased collector current and common emitter (CE) current gain at lower temperature in AlGaN/GaN heterojunction bipolar transistors is reported. For the same base current IB = 15 µA and biased voltage VCE = 50 V, the collector current increases from IC = 169 µA (β = 11) at 295 K to IC = 411 µA (β = 27) at 190 K. This increase in the collector current and CE gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with dislocation centres in the base-emitter junction.

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