Class-C power amplifier design for GSM application

This paper presents a Class C Power Amplifier (PA) design with better efficiency for Global System for Mobile communications (GSM) application. This design is implemented in 90 nm CMOS technology, which consumes low power (around 1 Watt). This designed circuit is simulated and validated for different frequencies in between 935-960 MHz; this frequency range usually adopted in GSM applications. This circuit has efficiency of 50% and output gain is 23.15 dB.

[1]  H. Zirath,et al.  A comprehensive analysis of IMD behavior in RF CMOS power amplifiers , 2004, IEEE Journal of Solid-State Circuits.

[2]  Jose C. Pedro,et al.  Large- and small-signal IMD behavior of microwave power amplifiers , 1999 .

[3]  Mihai Albulet,et al.  RF power amplifiers , 2001 .

[4]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[5]  Bumman Kim,et al.  Linearity analysis of CMOS for RF application , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[6]  D.J. Allstot,et al.  Parasitic-aware design and optimization of CMOS RF integrated circuits , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[7]  Youngoo Yang,et al.  A highly linear and efficient differential CMOS power amplifier with harmonic control , 2006, IEEE Journal of Solid-State Circuits.