Modeling of charge‐injection effects in metal‐oxide‐semiconductor structures

A recently published dynamic balance model which describes gate‐oxide degradation following prolonged charge injection is modified. This modification replaces the average electric field in the oxide with the electric field spatial distribution. It is shown that a very close interchangeable relationship exists between the electric field spatial distribution and the spatial distributions of the trapped charge and generated trapping sites. The validity of the new modified model is confirmed for different oxide thicknesses (130–720 A), injection techniques (hot‐electron injection and constant current‐tunneling injection), and gate electrode material (aluminum versus polycrystalline silicon). The most attractive feature of the modified dynamic balance model is its ability to describe the steady‐state occupation level changes for any given electric field following any oxide stress injection. Furthermore, the modified model is used to propose a new breakdown model which is described in a companion paper.

[1]  D. Frohman-Bentchkowsky,et al.  Dynamic model of trapping‐detrapping in SiO2 , 1985 .

[2]  R. Gastaldi,et al.  Positive charge effects on the flatband voltage shift during avalanche injection on Al‐SiO2‐Si capacitors , 1982 .

[3]  N. Klein,et al.  Current runaway in insulators affected by impact ionization and recombination , 1976 .

[4]  M. Liang,et al.  MOSFET Degradation due to stressing of thin oxide , 1984, 1982 International Electron Devices Meeting.

[5]  Temperature effects on electron trap generation and occupation in SiO2 , 1988 .

[6]  Y. Nissan-Cohen,et al.  High‐field and current‐induced positive charge in thermal SiO2 layers , 1985 .

[7]  Paul Budenstein,et al.  On the Mechanism of Dielectric Breakdown of Solids , 1980, IEEE Transactions on Electrical Insulation.

[8]  N. Klein,et al.  Impact ionization in silicon dioxide at fields in the breakdown range , 1975 .

[9]  J. Shappir,et al.  Oxide trapping under spatially variable oxide electric field in the metal‐oxide‐silicon structure , 1987 .

[10]  H. R. Zeller,et al.  A fractal model of dielectric breakdown and prebreakdown in solid dielectrics , 1986 .

[11]  J. Shappir,et al.  Effects of temperature annealing on charge‐injection‐induced trapping in gate oxides of metal‐oxide‐silicon transistors , 1988 .

[12]  M. Knoll,et al.  Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection Experiments , 1982, IEEE Transactions on Nuclear Science.

[13]  D. Dimaria,et al.  Light Emission from Electron-Injector Structures , 1983 .

[14]  A. Modelli,et al.  Slow and fast states induced by hot electrons at Si‐SiO2 interface , 1982 .

[15]  D. R. Young,et al.  High temperature annealing behavior of electron traps in thermal SiO2 , 1984 .

[16]  Y. Nissan-Cohen,et al.  The effect of gate material on oxide degradation due to charge-injection in metal-oxide-semiconductor capacitors , 1988 .

[17]  S. R. Butler,et al.  Energy and spatial distribution of an electron trapping center in the MOS insulator , 1977 .

[18]  C. N. Berglund,et al.  Photoinjection Studies of Charge Distributions in Oxides of MOS Structures , 1971 .

[19]  Y. Nissan-Cohen,et al.  High field current induced‐positive charge transients in SiO2 , 1983 .

[20]  A. Jonscher,et al.  On a Cumulative Model of Dielectric Breakdown in Solids , 1984, IEEE Transactions on Electrical Insulation.

[21]  Piero Olivo,et al.  Electron trapping/detrapping within thin SiO2 films in the high field tunneling regime , 1983 .

[22]  S. Holland,et al.  Hole trapping and breakdown in thin SiO2 , 1986, IEEE Electron Device Letters.

[23]  Ih-Chin Chen,et al.  Electrical breakdown in thin gate and tunneling oxides , 1985 .

[24]  D. Dimaria,et al.  Strong electric field heating of conduction-band electrons in SiO2 , 1984 .

[25]  K. Ziegler.  Distinction between donor and acceptor character of surface states in the Si‐SiO2 interface , 1978 .

[26]  J. M. Andrews,et al.  Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents , 1971 .

[27]  O. G. Folberth,et al.  Solid State Devices 1985 , 1986 .

[28]  E. Harari.  Dielectric breakdown in electrically stressed thin films of thermal SiO2 , 1978 .

[29]  Y. Nissan-Cohen,et al.  Trap generation and occupation dynamics in SiO2 under charge injection stress , 1986 .

[30]  M. Knoll,et al.  Comparative studies of tunnel injection and irradiation on metal oxide semiconductor structures , 1982 .

[31]  Ching-Yuan Wu,et al.  A characterization model for constant current stressed voltage‐time characteristics of thin thermal oxides grown on silicon substrates , 1986 .