论文信息 - Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS - 字舞流文

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Bo Zhang | Zhaoji Li | M. Qiao | Xin Zhou | Dican Hou | Bo Zhang | Zhangyi’an Yuan | Xinjian Li | Shuhao Zhang