Amplifier in a 0.12µm SOI CMOS
暂无分享,去创建一个
Jean-Olivier Plouchart | Jonghae Kim | Robert A. Groves | Lawrence F. Wagner | Yue Tan | Noah Zamdmer | Melanie J. Sherony | R. Groves | J. Safran | Jonghae Kim | M. Sherony | J. Plouchart | L. Wagner | N. Zamdmer | John M. Safran | R. Trzcenski | Yue Tan | M. Talbi | Mohamed Talbi | Robert Trzcenski
[1] K.W. Kobayashi,et al. A 2-50 GHz InAlAs/InGaAs-InP HBT distributed amplifier , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
[2] J.M. Carroll,et al. 0.25/spl mu/m pHEMT 40Gb/s E/O modulator drivers , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).
[3] M. Sherony,et al. Suitability of Scaled SOI CMOS for High-Frequency Analog Circuits , 2002, 32nd European Solid-State Device Research Conference.
[4] S. Yokokawa,et al. An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems , 2002 .
[5] Liang-Hung Lu,et al. 3-dimensional vertical parallel plate capacitors in an SOI CMOS technology for integrated RF circuits , 2003, 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).