Modeling of the CoolMOS/sup TM/ transistor - Part I: Device physics

CoolMOS/sup TM/ is a novel power MOSFET with a "superjunction" for its drift region, which results in a vastly improved relationship between the on resistance and breakdown voltage. The presence of the superjunction makes the device physics very interesting and complicated. In this paper, we present simulation results aimed at understanding the device operation both in the on state and in the off state. Quasi saturation of the drain current is analyzed, and it is shown that it can be prevented by increasing the doping density of the drift region. An analytic model of the JFET-like drift region is presented. A CoolMOS/sup TM/ transistor model based on the simulation results described here will be presented in an accompanying paper.

[1]  J. Tihanyi,et al.  A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  B. J. Baliga,et al.  Modern Power Devices , 1987 .

[3]  M. Darwish,et al.  Study of the quasi-saturation effect in VDMOS transistors , 1986, IEEE Transactions on Electron Devices.

[4]  Akio Nakagawa,et al.  Predicted electrical characteristics of 4500 V super multi-RESURF MOSFETs , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[5]  T. Fujihira.  Theory of Semiconductor Superjunction Devices , 1997 .

[6]  T. Fujihira,et al.  Simulated superior performances of semiconductor superjunction devices , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[7]  G. Deboy,et al.  COOLMOS/sup TM/-a new milestone in high voltage power MOS , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[8]  Mahesh B. Patil,et al.  Modeling of the CoolMOS™ Transistor—Part II: DC Model and Parameter Extraction , 2002 .

[9]  Gary M. Dolny,et al.  Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[10]  B. J. Daniel,et al.  Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction , 2002 .

[11]  K. Board,et al.  Theory of a novel voltage-sustaining layer for power devices , 1998 .