Experimental Analysis of Punch-Through Conditions in Power $P$-$I$- $N$ Diodes

Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found

[1]  Zhiming Chen,et al.  Soft recovery characteristics of punch-through power diodes by proton irradiation , 2000, Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435).

[2]  F. Sawitzki,et al.  Improved recovery of fast power diodes with self-adjusting p emitter efficiency , 1989, IEEE Electron Device Letters.

[3]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[4]  P. D. Taylor,et al.  Modern Power Devices , 1988 .

[5]  Cher Ming Tan,et al.  Using power diode models for circuit simulations-a comprehensive review , 1999, IEEE Trans. Ind. Electron..

[6]  Bruno Allard,et al.  On the validity of the standard SPICE model of the diode for simulation in power electronics , 2001, IEEE Trans. Ind. Electron..

[7]  Y. Ishimura,et al.  Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures , 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

[8]  Hans Jurgen Mattausch,et al.  Status and trends of power semiconductor device models for circuit simulation , 1998 .

[9]  J.-P. Laur,et al.  Full dynamic power bipolar device models for circuit simulation , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[10]  P.M. Igic,et al.  Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT) , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

[11]  Bruno Allard,et al.  Error in estimation of power switching losses based on electrical measurements , 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

[12]  H. Morel,et al.  On the extraction of PiN diode design parameters for validation of integrated power converter design , 2005, IEEE Transactions on Power Electronics.

[15]  Antonio G. M. Strollo,et al.  A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation , 1997 .

[16]  François Costa,et al.  Wide bandwidth, large AC current probe for power electronics and EMI measurements , 1997, IEEE Trans. Ind. Electron..