Electrical transport and ferromagnetism in Ga1−xMnxAs synthesized by ion implantation and pulsed-laser melting

We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1−xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1−xMnxAs films have all of the characteristic signatures of the strong p‐d interaction of holes and Mn ions observed in the dilute hole-mediated ferromagnetic phase. The ferromagnetic and electrical transport properties of II-PLM films correspond to the peak substitutional Mn concentration meaning that the nonuniform Mn depth distribution is unimportant in determining the film properties. Good quantitative agreement is found with films grown by low temperature molecular beam epitaxy and having the similar substitutional MnGa composition. Additionally, we demonstrate that II-PLM Ga1−xMnxAs films are free from interstitial MnI because of the high-temperature proce...

[1]  H. Ohno,et al.  Character of states near the Fermi level in (Ga,Mn)as : Impurity to valence band crossover , 2007, 0707.0665.

[2]  M. Sawicki,et al.  Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors , 2005 .

[3]  T. Venkatesan,et al.  Annealing of Te‐implanted GaAs by ruby laser irradiation , 1978 .

[4]  M. Allmen.  Laser-beam interactions with materials , 1987 .

[5]  V. Gottschalch,et al.  Revealing of lattice defects on {001} GaAs surfaces by KI:I:H2SO4-etchant , 1990 .

[6]  J. Beeman,et al.  Compositional tuning of ferromagnetism in Ga1−xMnxP , 2006, cond-mat/0608133.

[7]  Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes , 1996 .

[8]  M. Scarpulla,et al.  Mutual passivation of electrically active and isovalent impurities , 2002, Nature materials.

[9]  Hall Effect and Magnetoresistance in P-Type Ferromagnetic Semiconductors , 2003, cond-mat/0306484.

[10]  N. G. Chew,et al.  Amorphization of germanium, gallium phosphide, and gallium arsenide by laser quenching from the melt , 1983 .

[11]  Magnetic properties of (Ga,Mn)As , 2006 .

[12]  S. Solmi,et al.  Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in Silicon , 1983 .

[13]  P. Griffin,et al.  Physical processes associated with the deactivation of dopants in laser annealed silicon , 2002 .

[14]  Tomasz Wojtowicz,et al.  Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature , 2002 .

[15]  B. Jankó,et al.  Scaling theory of magnetoresistance in disordered local moment ferromagnets , 2004, cond-mat/0410003.

[16]  M. Allmen,et al.  Laser-beam interactions with materials : physical principles and applications , 1987 .

[17]  C. Foxon,et al.  Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films , 2005 .

[18]  P. Wyder,et al.  Recent trends in theory of physical phenomena in high magnetic fields , 2003 .

[19]  George K. Celler,et al.  Ohmic contacts produced by laser‐annealing Te‐implanted GaAs , 1978 .

[20]  Quantitative study of magnetotransport through a (Ga,Mn)As single ferromagnetic domain , 2004, cond-mat/0412290.

[21]  J. Williams.  Chapter 11 – Compound Semiconductors , 1982 .

[22]  D. Awschalom,et al.  Onset of Ferromagnetism in Low-Doped Ga1-xMnxAs. , 2007, Physical review letters.

[23]  S. Ogale,et al.  Co-occurrence of superparamagnetism and anomalous hall effect in highly reduced cobalt-doped rutile TiO2-delta films. , 2004, Physical review letters.

[24]  F. von Oppen,et al.  Disorder-induced resistive anomaly near ferromagnetic phase transitions. , 2004, Physical review letters.

[25]  R. Farshchi,et al.  MnL3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga1−xMnxP , 2006 .

[26]  M A Scarpulla,et al.  Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band. , 2005, Physical review letters.

[27]  R. T. Young,et al.  Pulsed laser processing of semiconductors , 1984 .

[28]  C. T. Foxon,et al.  The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers , 2003 .

[29]  Temperature dependent magnetic anisotropy in (Ga, Mn)As layers , 2002, cond-mat/0212511.

[30]  James W. Mayer,et al.  Laser Annealing of Semiconductors , 1983 .

[31]  A. MacDonald,et al.  Ferromagnetic semiconductors: moving beyond (Ga,Mn)As , 2005, cond-mat/0503185.

[32]  J. Beeman,et al.  Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1-x formed by N ion implantation , 2002 .

[33]  D. D. Awschalom,et al.  Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers , 2002 .

[34]  P. Baeri.  Pulsed laser quenching of metastable phases , 1994 .

[35]  T. Mcguire,et al.  Anisotropic magnetoresistance in ferromagnetic 3d alloys , 1975 .

[36]  C. Foxon,et al.  High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing , 2002, cond-mat/0209554.

[37]  日本物理学会.  International Conference on the Physics of Semiconductors , 1966 .

[38]  High-temperature hall effect in ga1-xmnxas , 2003, cond-mat/0302013.

[39]  C. Foxon,et al.  Magnetoresistance and Hall effect in the ferromagnetic semiconductor Ga1−xMnxAs , 2002, cond-mat/0209123.

[40]  A. Menzel,et al.  Uniaxial in-plane magnetic anisotropy of Ga1−xMnxAs , 2004 .

[41]  S. R. Wilson,et al.  Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon , 1980 .

[42]  X. Liu,et al.  Magnetic domain structure and magnetic anisotropy in Ga1-xMn(x)As. , 2003, Physical review letters.

[43]  H. Ohno,et al.  Making nonmagnetic semiconductors ferromagnetic , 1998, Science.

[44]  J Wu,et al.  Diluted II-VI oxide semiconductors with multiple band gaps. , 2003, Physical review letters.

[45]  X. Liu,et al.  Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling , 2002 .

[46]  T. Jungwirth,et al.  Theory of ferromagnetic (III, Mn) V semiconductors , 2006, cond-mat/0603380.

[47]  M. Fisher,et al.  Resistive Anomalies at Magnetic Critical Points , 1968 .

[48]  Michael A. Scarpulla,et al.  Ferromagnetic Ga1-xMnx as Films Produced by Ion Implantation and Pulsed Laser Melting , 2003 .

[49]  Xiaofeng Liu,et al.  Ferromagnetic resonance in Ga 1 − x Mn x As : Effects of magnetic anisotropy , 2003 .