High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiO x Passivation

� Abstract�-�WeproposedAlGaN/GaNhighelectronmobilitytransistors�(HEMTs)�usingthermal� oxidationforNiOxpassivation.�Augerelectronspectroscopy,�secondaryionmassspectroscopy,�and� pulsedIVwereusedtostudyoxidationfeatures.�TheoxidationprocessdiffusedNiandOintothe� AlGaNbarrierandformedNiOxonthesurface.�Thebreakdownvoltageoftheproposeddevicewas� 1520�Vwhilethatoftheconventionaldevicewas�300�V.�Thegateleakagecurrentoftheproposed� devicewas�3.5�5A/mmandthatoftheconventionaldevicewas�1116.7�5A/mm.�Theconventional� deviceexhibitedsimilarcurrentinthegateanddrainpulsedIVanditsdrainpulsedcounterpart.�The� gateanddrainpulsedcurrentoftheproposeddevicewasabout�56�%�ofthedrainpulsedcurrent.�This� indicatedthattheoxidationprocessmayformdeepstateshavingalowemissioncurrent,�whichthen� suppressestheleakagecurrent.�Ourresultssuggestthattheproposedprocessissuitableforachieving� highbreakdownvoltagesintheGaNbaseddevices.� �

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