论文信息 - Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes - 字舞流文

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

B. K. Ng | J. David | C. M. Johnson | J. Ng | P. Sandvik | W. Loh | S. Soloviev | J. S. Ng