Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures

We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN.

[1]  Takashi Mukai,et al.  Surface-plasmon-enhanced light emitters based on InGaN quantum wells , 2004, Nature materials.

[2]  W. Barnes,et al.  Surface plasmon subwavelength optics , 2003, Nature.

[3]  Yen-Cheng Lu,et al.  Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well , 2007, Nanotechnology.

[4]  Jürgen Christen,et al.  Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate , 2007 .

[5]  In-Hwan Lee,et al.  A well protection layer as a novel pathway to increase indium composition: a route towards green emission from a blue InGaN/GaN multiple quantum well , 2007 .

[6]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[7]  Eli Yablonovitch,et al.  Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling , 2002, cond-mat/0204150.

[8]  Eun-Kyung Suh,et al.  Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster , 2009 .

[9]  Alexander A. Balandin,et al.  Increased thermal conductivity of free‐standing low‐dislocation‐density GaN films , 2005 .

[10]  Il-Kyu Park,et al.  Surface‐Plasmon‐Enhanced Light‐Emitting Diodes , 2008 .

[11]  Kenjiro Miyano,et al.  Resonant light scattering from metal nanoparticles: Practical analysis beyond Rayleigh approximation , 2003 .

[12]  E. Purcell.  Spontaneous Emission Probabilities at Radio Frequencies , 1995 .

[13]  Hao-Chung Kuo,et al.  Nano-Processing Techniques Applied in GaN-Based Light-Emitting Devices With Self-Assembly Ni Nano-Masks , 2008, Journal of Lightwave Technology.

[14]  Stephen J. Pearton,et al.  Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers , 2006 .

[15]  Kuang-Che Lee,et al.  Size effect of Ag nanoparticles on surface plasmon resonance , 2008 .

[16]  Anatoliy O. Pinchuk,et al.  Size-dependent surface-plasmon-enhanced photoluminescence from silver nanoparticles embedded in silica , 2009 .

[17]  Dong-Yul Lee,et al.  Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes , 2009 .

[18]  Chia-Feng Lin,et al.  Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces , 2008 .

[19]  Nakamura,et al.  The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes , 1998, Science.

[20]  Hao-Chung Kuo,et al.  Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[21]  Gun Young Jung,et al.  Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal , 2008 .