论文信息 - Line Width of Inter-Subband Absorption in Inversion Layers: Scattering from Charged Ions

Line Width of Inter-Subband Absorption in Inversion Layers: Scattering from Charged Ions

The broadening of the inter-subband absorption is calculated in space-charge layers on a Si surface. Scatterers are assumed to be dominated by charged ions at the Si-SiO 2 interface. Among two different contributions to the broadening, the intra-subband process shows a drastic dependence on the strength of the depletion field, while dependence is smaller for the inter-subband process. The results explain recent experiments in accumulation layers on the Si (100) surface where extra Na + ions are intentionally introduced at the interface.

Tsuneya Ando | T. Ando

[1] T. Ando,et al. Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures , 1979 .

[2] T. Ando. Density-functional calculation of subband structure on semiconductor surfaces , 1976 .

[3] F. Stern,et al. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit , 1967 .

[4] B. Vinter. Self-consistent calculation of impurity scattering in inversion layers , 1978 .

[5] A. Hartstein,et al. Temperature dependence of scattering in the inversion layer , 1980 .

[6] T. Ando. Broadening of Inter-Subband Transitions in Image-Potential-Induced Surface States outside Liquid Helium , 1978 .

[7] T. H. Ning,et al. Electron scattering in silicon inversion layers by oxide and surface roughness , 1976 .

[8] T. Ando. Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields , 1977 .

[9] F. Stern,et al. Electronic properties of two-dimensional systems , 1982 .

[10] B. McCombe,et al. Intersubband spectroscopy of inversion layers in the principal surfaces of silicon: Many-body and “impurity” effects , 1980 .