Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces

Recently, systematic studies of the electrical properties of both n‐ and p‐type Schottky diodes formed by a large number of metals on GaAs of both (100) and (110) orientation and on (100)‐oriented InP have been reported. Current‐voltage (I‐V) and capacitance‐voltage (C‐V) measurements were carried out and the barrier heights were evaluated in these studies. In this paper, these I‐V zero‐bias barrier heights have been correlated with the ideality factors of these diodes. Resulting from this modified barrier height approach is a more fundamental flat‐band (zero‐field) barrier which compares remarkably well with the reported values from the C‐V measurements. In addition, the sum of the modified n‐ and p‐type flat‐band barrier heights for the GaAs (100) and InP (110) Schottky diodes is in better agreement with the band gap for each of the different metals used than the initially reported results.

[1]  M. Missous,et al.  Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxy , 1986 .

[2]  E. H. Rhoderick,et al.  Schottky barriers on p-type silicon , 1971 .

[3]  John W. V. Storey,et al.  P-type PtSi Schottky-diode barrier height determined from I–V measurement , 1989 .

[4]  R. Young,et al.  A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurements , 1983, IEEE Electron Device Letters.

[5]  M. Missous,et al.  New way of plotting current/voltage characteristics of Schottky diodes , 1986 .

[6]  G. Robinson,et al.  Schottky contacts on chemically etched p‐ and n‐type indium phosphide , 1982 .

[7]  I. Lindau,et al.  Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States , 1980 .

[8]  R. H. Williams,et al.  Chemical effects in Schottky barrier formation , 1978 .

[9]  N. Newman,et al.  Electrical study of Schottky barrier heights on atomically clean and air‐exposed n‐InP(110) surfaces , 1985 .

[10]  E. H. Rhoderick,et al.  Metal–Semiconductor Contacts , 1979 .

[11]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[12]  A. Zunger.  The Origin of Schottky Barriers on the Cleavage P1Lane of III–V Semiconductors: Review of Some Recent Theoretical Work , 1982 .

[13]  R. H. Williams,et al.  The interaction of Al, Mn, and Ag with clean and oxidized GaAs and InP(110) surfaces , 1986 .

[14]  Williams,et al.  Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces. , 1986, Physical review. B, Condensed matter.

[15]  J. R. Waldrop,et al.  Electrical properties of ideal metal contacts to GaAs: Schottky‐barrier height , 1984 .

[16]  Newman,et al.  Electrical study of Schottky-barrier heights on atomically clean p-type InP(110) surfaces. , 1987, Physical review. B, Condensed matter.

[17]  L. Lassabatere,et al.  Formation de l'interface métal/InP et de diodes Schottky sur InP , 1984 .

[18]  C. R. Crowell,et al.  Current transport in metal-semiconductor barriers , 1966 .

[19]  C. R. Crowell,et al.  EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES , 1964 .

[20]  E H Rhoderick.  The physics of Schottky barriers , 1970 .

[21]  Carver A. Mead,et al.  Metal-semiconductor surface barriers , 1966 .

[22]  R. Bechmann,et al.  Numerical data and functional relationships in science and technology , 1969 .

[23]  I. Lindau,et al.  Unified defect model and beyond , 1980 .