Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces

Recently, systematic studies of the electrical properties of both n‐ and p‐type Schottky diodes formed by a large number of metals on GaAs of both (100) and (110) orientation and on (100)‐oriented InP have been reported. Current‐voltage (I‐V) and capacitance‐voltage (C‐V) measurements were carried out and the barrier heights were evaluated in these studies. In this paper, these I‐V zero‐bias barrier heights have been correlated with the ideality factors of these diodes. Resulting from this modified barrier height approach is a more fundamental flat‐band (zero‐field) barrier which compares remarkably well with the reported values from the C‐V measurements. In addition, the sum of the modified n‐ and p‐type flat‐band barrier heights for the GaAs (100) and InP (110) Schottky diodes is in better agreement with the band gap for each of the different metals used than the initially reported results.

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