Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots

In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is measured whereas the photocurrent spectra are determined by bound-to-continuum transitions. The experimental determination of the energies of both types of transitions for the same sample allows a detailed discussion of the features observed in the spectra as well as an estimate of the average Ge content in the dots.

[1]  Bauer,et al.  Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells. , 1994, Physical review. B, Condensed matter.

[2]  O. Schmidt,et al.  Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands , 2000 .

[3]  Kang L. Wang,et al.  Infrared multispectral detection using Si/SixGe1−x quantum well infrared photodetectors , 2001 .

[4]  A. Yakimov,et al.  Interlevel Ge/Si quantum dot infrared photodetector , 2001 .

[5]  M. Helm,et al.  Transverse magnetic and transverse electric polarized inter‐subband absorption and photoconductivity in p‐type SiGe quantum wells , 1996 .

[6]  E. Finkman,et al.  Midinfrared photoconductivity of Ge/Si self-assembled quantum dots , 2000 .

[7]  G. Abstreiter,et al.  Admittance spectroscopy of Ge quantum dots in Si , 2000 .

[8]  C. Bethea,et al.  Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si , 1992 .

[9]  Gerhard Abstreiter,et al.  Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si , 2000 .

[10]  D. Bouchier,et al.  Intraband absorption in Ge/Si self-assembled quantum dots , 1999 .

[11]  A. Yakimov,et al.  Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots , 1999 .

[12]  G. Dehlinger,et al.  Intersubband electroluminescence from silicon-based quantum cascade structures. , 2000, Science.

[13]  Ya-Hong Xie,et al.  Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si , 1999 .

[14]  Kang L. Wang,et al.  Normal incidence infrared detector using p‐type SiGe/Si multiple quantum wells , 1992 .

[15]  Kang L. Wang,et al.  INTERSUBBAND ABSORPTION IN BORON-DOPED MULTIPLE GE QUANTUM DOTS , 1999 .

[16]  O. Schmidt,et al.  Effect of overgrowth temperature on the photoluminescence of Ge/Si islands , 2000 .

[17]  Thomas Fromherz,et al.  Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K , 1996 .

[18]  Gerhard Abstreiter,et al.  Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots , 1999 .

[19]  G. Abstreiter,et al.  Lateral photodetectors with Ge quantum dots in Si , 2001 .

[20]  Gerhard Abstreiter,et al.  Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots , 2000 .

[21]  E. Finkman,et al.  Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots , 2001 .

[22]  C. W. Tipton,et al.  EFFECT OF HYDROGEN ON PB(ZR, TI)O3-BASED FERROELECTRIC CAPACITORS , 1998 .

[23]  Shin-Shem Pei,et al.  Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors , 1991 .