Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
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Katsuhiro Akimoto | Shigeo Tomita | Akira Uedono | Hiroshi Kudo | Shoji Ishibashi | Shaoqiang Chen | A. Uedono | K. Akimoto | S. Ishibashi | Shaoqiang Chen | H. Kudo | S. Tomita
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