论文信息 - Physical and electrical characteristics of HfN gate electrode for advanced MOS devices - 字舞流文

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

D. Kwong | D. Chi | H. Yu | M. Li | A. Du | W.D. Wang | C. Tung | Chunxiang Zhu | J.H. Chen | H.F. Lim