The single electron transistor and artificial atoms

Modern techniques of lithography make it possible to confine electrons to sufficiently small dimensions that the quantization of both their charge and their energy are easily observable. When such confined electrons are allowed to tunnel to metallic leads a single electron transistor (SET) is created. This transistor turns on and off again every time one electron is added to the isolated region. Whereas we can understand conventional transistors using classical concepts, the SET is quantum mechanical in an essential way. In fact, there is a close analogy between the confined electrons inside an SET and an atom. In this review, the physics underlying the operation of SETs is explained, a brief history of its invention is presented, and issues of current interest are discussed.

[1]  Meir,et al.  Transport spectroscopy of a Coulomb island in the quantum Hall regime. , 1991, Physical review letters.

[2]  D. Thouless,et al.  Maximum metallic resistance in thin wires , 1977 .

[3]  R. A. Webb,et al.  Mesoscopic phenomena in solids , 1991 .

[4]  Meir,et al.  Effects of quantum levels on transport through a Coulomb island. , 1993, Physical review. B, Condensed matter.

[5]  M. Tinkham,et al.  Gate-Voltage Studies of Discrete Electronic States in Aluminum Nanoparticles , 1997 .

[6]  From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor , 1998, cond-mat/9807233.

[7]  Tarucha,et al.  Excitation spectra of circular, few-electron quantum dots , 1997, Science.

[8]  Kastner,et al.  Single-electron charging and periodic conductance resonances in GaAs nanostructures. , 1990, Physical review letters.

[9]  L. Glazman,et al.  Coulomb oscillations of the conductance in a laterally confined heterostructure , 1989 .

[10]  Ivar Giaever,et al.  Tunneling, Zero-Bias Anomalies, and Small Superconductors , 1969 .

[11]  M. Bawendi,et al.  Synthesis and characterization of nearly monodisperse CdE (E = sulfur, selenium, tellurium) semiconductor nanocrystallites , 1993 .

[12]  Patel,et al.  Statistics and parametric correlations of Coulomb blockade peak fluctuations in quantum dots. , 1996, Physical review letters.

[13]  R. Ashoori.  Electrons in artificial atoms , 1996, Nature.

[14]  M. Kastner,et al.  Kondo effect in a single-electron transistor , 1997, Nature.

[15]  Deborah Silver,et al.  Visiometrics, Juxtaposition and Modeling , 1993 .

[16]  E. Ben-Jacob,et al.  The charge‐effect transistor , 1989 .

[17]  D. Chklovskii,et al.  Electrostatics of edge channels. , 1992, Physical review. B, Condensed matter.

[18]  Weis,et al.  Competing channels in single-electron tunneling through a quantum dot. , 1993, Physical review letters.

[19]  Johnson,et al.  Zero-dimensional states and single electron charging in quantum dots. , 1992, Physical review letters.

[20]  West,et al.  Non-Gaussian distribution of Coulomb blockade peak heights in quantum dots. , 1996, Physical review letters.

[21]  K. Klitzing,et al.  A quantum dot in the limit of strong coupling to reservoirs , 1998 .

[22]  K. Likharev.  Correlated discrete transfer of single electrons in ultrasmall tunnel junctions , 1988 .

[23]  M. Kastner,et al.  The single-electron transistor , 1992 .

[24]  Dolan,et al.  Observation of single-electron charging effects in small tunnel junctions. , 1987, Physical review letters.

[25]  T. Ng,et al.  On-site Coulomb repulsion and resonant tunneling. , 1988, Physical review letters.

[26]  Kouwenhoven,et al.  A tunable kondo effect in quantum dots , 1998, Science.

[27]  Fausto Fantini,et al.  Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo lines , 1995 .

[28]  Smith,et al.  Conductance oscillations periodic in the density of a one-dimensional electron gas. , 1989, Physical review letters.

[29]  Klein,et al.  Exchange Effects in an Artificial Atom at High Magnetic Fields. , 1995, Physical review letters.

[30]  Yasuo Takahashi,et al.  Fabrication technique for Si single-electron transistor operating at room temperature , 1995 .