Reliable GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements

GaN HEMT performance is still compromised by trapping effects, but no commercial circuit simulator already provides compact models that account for these effects. This work explores the capability of a standard Chalmers (Angelov) model to accurately predict the power amplifier operation of GaN HEMTs. It is shown that relying on pulsed S-parameters and by restricting the model to be valid only for a fixed drain voltage, good simulation accuracy is achieved.

[1]  R. Quéré,et al.  An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR , 2007, IEEE Transactions on Microwave Theory and Techniques.

[2]  W. Heinrich,et al.  Noise modeling of GaN HEMT devices , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[3]  H. Zirath,et al.  On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs , 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

[4]  Michel Prigent,et al.  Direct extraction of a distributed nonlinear FET model from pulsed I-V/pulsed S-parameter measurements , 1998 .

[5]  I. Angelov,et al.  Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .