Structure of vapor‐deposited Ge films as a function of substrate temperature

The structure of Ge films grown by thermal evaporation has been studied as a function of the deposition temperature Ts by X‐ray diffraction, Raman scattering, and EXAFS (Extended X‐ray Absorption Fine Structure) analysis. It is found that there is a temperature range where the material is microscopically heterogeneous and consists of crystallites embedded in an amorphous connective tissue. The dimension and the percentage of the ordered domains are determined, and the nature of the amorphous to polycrystalline transition is thoroughly investigated. The data support the hypothesis of the instability of the diamond structure for small crystallites.ufoff

[1]  L. Ley,et al.  The one phonon Raman spectrum in microcrystalline silicon , 1981 .

[2]  Edward A. Stern,et al.  Extended x-ray-absorption fine-structure technique. III. Determination of physical parameters , 1975 .

[3]  P. Gaskell.  REVIEW ARTICLE: On the structure of simple inorganic amorphous solids , 1979 .

[4]  G. Conte,et al.  Structural properties of silicon thin films deposited by flow discharge , 1981 .

[5]  J. S. Johannessen.  The amorphous–crystalline transition in germanium films , 1974 .

[6]  L. Incoccia,et al.  EXAFS investigation of amorphous-to-crystal transition in Ge , 1981 .

[7]  M. Brodsky.  Relations between Structure and the Optical and Electrical Properties of Amorphous Si and Ge Films , 1971 .

[8]  G. Döhler,et al.  Bond charge model of amorphous tetrahedrally coordinated solids , 1980 .

[9]  A. Ushirokawa,et al.  Observation of the amorphous‐to‐crystalline transition in silicon by Raman scattering , 1981 .

[10]  J. Dillon.  XXV. On the rules for algebraical multiplication , 1815 .

[11]  L. Alexander,et al.  X-ray diffraction procedures , 1954 .

[12]  Zafar Iqbal,et al.  A thermodynamic criterion of the crystalline-to-amorphous transition in silicon , 1982 .

[13]  F. Kessler,et al.  Surface influences of glass substrates on lattice parameters and phase transition temperature of evaporated Ge thin films , 1978 .

[14]  Zafar Iqbal,et al.  Raman scattering from hydrogenated microcrystalline and amorphous silicon , 1982 .