High-power vertical-cavity surface-emitting arrays

We present record output power levels (a few hundred Watts) in continuous-wave (CW) and quasi-CW (QCW) from 2D vertical-cavity surface-emitting laser (VCSEL) arrays, corresponding to power densities exceeding 1kW/cm2 in CW and 3.5kW/cm2 in QCW. These VCSEL arrays emit around 975nm with narrow spectral width (<1nm) and excellent wavelength stability (<0.07nm/K). Peak power conversion efficiency of properly designed arrays exceeds 50%. Additional features of these arrays include emission in a circular, low-diverging beam, and reliable high-temperature operation. These arrays can also be operated reliably in short pulses (<200nsec) at many times their roll-over CW current, making them useful for high-energy applications. VCSEL arrays with 2.2kW peak output power operating under 100nsec pulse-width have been demonstrated.

[1]  B.E. Lemoff,et al.  The ideal light source for datanets , 1998, IEEE Spectrum.

[2]  Kent D. Choquette,et al.  Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency , 1995 .

[3]  Kent D. Choquette,et al.  Vertical-cavity surface emitting lasers: moving from research to manufacturing , 1997, Proc. IEEE.

[4]  R. Michalzik,et al.  Bottom-emitting VCSEL's for high-CW optical output power , 1998, IEEE Photonics Technology Letters.

[5]  B W Schilling,et al.  Monoblock laser for a low-cost, eyesafe, microlaser range finder. , 2000, Applied optics.

[6]  John E. Bowers,et al.  Vertical cavity lasers for telecom applications , 1997 .

[7]  Hans-Ulrich Pfeiffer,et al.  Reliability of 980 nm pump lasers for submarine, long-haul terrestrial, and low cost metro applications , 2002, Optical Fiber Communication Conference and Exhibit.

[8]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[9]  Kent D. Choquette,et al.  Vertical-cavity surface-emitting lasers with 50% power conversion efficiency , 1995 .

[10]  Andrew Clark,et al.  Commercialization of Honeywell's VCSEL technology , 2000, Photonics West - Optoelectronic Materials and Devices.

[11]  D. Deppe,et al.  Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .

[12]  A. Moser,et al.  Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs‐GaAs laser facets , 1992 .

[13]  K. Ebeling,et al.  High-power VCSEL arrays for emission in the watt regime at room temperature , 2001, IEEE Photonics Technology Letters.

[14]  S. Bounnak,et al.  200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.