Study of EUV contact lithography with a compact laser plasma source

It is performed by optimizing the source that experiments to demonstrate the feasibility of a small laser for EUV contact lithography. Using copper, steel and tungsten targets, the depth of development of DCPA resists exposed through 50 1/mm, 100 1/mm Cu free-standing nets are obtained for times from 10 to 40 min. A method of adding a pinhole is used to estimate the qualities of pattern of developed resist.