Clutter suppression in range/Doppler map using wavelet filters

We have measured the time-resolved photoconductive response of a strained InGaAs/InGaAsP/InP multiple quantum well laser structure as a function of temperature and bias. It is found that the hole escape is dominated by tunneling at reverse biases of greater than -0.5 V at all temperatures. Under forward bias, recombination is dominant at temperatures below approximately equals 90 K while thermal escape processes prevail at higher temperatures. From Arrhenius plots of the hole escape time, the activation energy from the ground level has been determined as a function of bias and is in good agreement with a valence band offset of 75 percent of the total band offset. The intercepts of the plots yielded a scattering parameter of 6 ps. The carrier dynamics within the well were simulated using a simple model of thermionic emission and gave good qualitative agreement. The calculations indicate that the structures have the potential for extremely fast detection.