Application of the thin-film SOI power MOSFET fabricated by sub-/spl mu/m-rule CMOS/SOI process for the DC-DC converter

A thin-film SOI power MOSFET was fabricated using a sub-micrometer-rule CMOS/SOI process. The product of input capacitance and on-resistance (C/sub iss//spl middot/R/sub on/) was 19.8 /spl Omega//spl middot/pF and that of output capacitance and on-resistance (C/sub oss//spl middot/R/sub on/) was 18.7 /spl Omega//spl middot/pF. Used as the main switch of a DC-DC converter, the switching frequency was 600 kHz, input voltage was 5 V and output voltage was 3.3 V. The performance of the thin-film SOI power MOSFET was equivalent to that of a main switch device fabricated on a conventional bulk-Si substrate.

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