1/f Noise Performance of Advanced Cmos Devices

[1]  Mikael Östling,et al.  Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics , 2004 .

[2]  J.C.S. Woo,et al.  Impurity barrier properties of reoxidized nitrided oxide films for use with P/sup +/-doped polysilicon gates , 1991, IEEE Electron Device Letters.

[3]  L. Ragnarsson,et al.  Ultrathin high-K gate stacks for advanced CMOS devices , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[4]  Dim-Lee Kwong,et al.  Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs , 2002 .

[5]  E. Simoen,et al.  Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks , 2006, IEEE Electron Device Letters.

[6]  John Robertson,et al.  Interfaces and defects of high-K oxides on silicon , 2005 .

[7]  M. Marin,et al.  Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology , 2004 .

[8]  L. D. Yau,et al.  A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .

[9]  C.W. Liu,et al.  Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs , 2004, IEEE Electron Device Letters.

[10]  A. Abidi,et al.  Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures , 1994 .

[11]  R. People,et al.  Physics and applications of Ge x Si 1-x /Si strained-layer heterostructures , 1986 .

[12]  R. Wallace,et al.  High-κ gate dielectrics: Current status and materials properties considerations , 2001 .

[13]  Evan H. C. Parker,et al.  Low-frequency noise mechanisms in Si and pseudomorphic SiGe p-channel field-effect transistors , 2004 .

[14]  H. Bu,et al.  Advanced CMOS transistors with a novel HfSiON gate dielectric , 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

[15]  Gijs Bosman,et al.  Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs , 2003 .

[16]  F. Balestra,et al.  Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance , 1987, IEEE Electron Device Letters.

[17]  G. Ghibaudo,et al.  SiGe channel p-MOSFETs scaling-down , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[18]  S. Haendler,et al.  Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs , 2004 .

[19]  Dongping Wu,et al.  Investigation of low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics , 2005 .

[20]  T. Manku,et al.  EFFECTIVE MASS FOR STRAINED P-TYPE SI1-XGEX , 1991 .

[21]  Gerard Ghibaudo,et al.  Scaling down and low‐frequency noise in MOSFET’s. Are the RTS’s the ultimate components of the 1/f noise? , 2008 .

[22]  Eddy Simoen,et al.  Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics , 2006 .

[23]  B. Aspar,et al.  "Smart cut": a promising new SOI material technology , 1995, 1995 IEEE International SOI Conference Proceedings.

[24]  Ming-Jinn Tsai,et al.  High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications , 2003 .

[25]  Eddy Simoen,et al.  Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors , 2004 .

[26]  Toshiaki Tsuchiya,et al.  Low-Frequency Noise in Si1-xGexp-Channel Metal Oxide Semiconductor Field-Effect Transistors , 2001 .

[27]  Bongkoo Kang,et al.  Effects of Segregated Ge on Electrical Properties of SiO2/SiGe Interface , 1997 .

[28]  Hiroshi Iwai,et al.  Low-Frequency Noise Characteristics of MISFET's with La2O3 Gate Dielectrics , 2003 .

[29]  C. Hu,et al.  BSIM4 gate leakage model including source-drain partition , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[30]  J. Bokor,et al.  Investigation of NiSi and TiSi as CMOS gate materials , 2003, IEEE Electron Device Letters.

[31]  K. Matsuzawa,et al.  The impact of oxynitride process, deuterium annealing and STI stress to1/f noise of 0.11 /spl mu/m CMOS , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

[32]  Eddy Simoen,et al.  γ-irradiation hardness of short-channel nMOSFETs fabricated in a SOI technology , 2002 .

[33]  J. Bokor,et al.  Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs , 2003, IEEE Electron Device Letters.

[34]  C.W. Liu,et al.  Threading dislocation induced low frequency noise in strained-Si nMOSFETs , 2005, IEEE Electron Device Letters.

[35]  G. Ghibaudo,et al.  Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs , 2006, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

[36]  Gijs Bosman,et al.  Noise model of gate-leakage current in ultrathin oxide MOSFETs , 2003 .

[37]  A. Mercha,et al.  Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs , 2004, IEEE Transactions on Electron Devices.

[38]  E. Simoen,et al.  Low-frequency (1/f) noise behavior of locally stressed HfO/sub 2//TiN gate-stack pMOSFETs , 2006, IEEE Electron Device Letters.

[39]  John D. Cressler,et al.  Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire , 1999 .

[40]  A. Ziel Noise in solid state devices and circuits , 1986 .

[41]  Eddy Simoen,et al.  On the beneficial impact of tensile-strained silicon substrates on the low-frequency noise of n-channel metal-oxide-semiconductor transistors , 2005 .

[42]  K. Kotani,et al.  1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process , 2006, IEEE Transactions on Electron Devices.

[43]  Z. Ren,et al.  Inversion channel mobility in high-/spl kappa/ high performance MOSFETs , 2003, IEEE International Electron Devices Meeting 2003.

[44]  E. P. Vandamme,et al.  Parameter extraction and 1/f noise in a surface and a bulk-type p-channel LDD MOSFET , 1994 .

[45]  Eddy Simoen,et al.  Flicker noise in deep submicron nMOS transistors , 2000 .

[46]  A. Hoffmann,et al.  Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm , 2004 .

[47]  Gérard Ghibaudo,et al.  Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..

[48]  D. Misra,et al.  Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs , 2005 .

[49]  M. Marin,et al.  1/f noise in 0.18 μm technology n-MOSFETs from subthreshold to saturation , 2002 .

[50]  D. Hisamoto,et al.  Unified mobility model for high-/spl kappa/ gate stacks [MISFETs] , 2003, IEEE International Electron Devices Meeting 2003.

[51]  M. Ieong,et al.  Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs , 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

[52]  Dim-Lee Kwong,et al.  Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectrics , 1995 .

[53]  Eddy Simoen,et al.  Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs , 2003 .

[54]  E. Bassous,et al.  Ion implanted MOSFETs with very short channel lengths , 1973 .

[55]  Y. Yeo,et al.  25 nm CMOS Omega FETs , 2002, Digest. International Electron Devices Meeting,.

[56]  Y. Nemirovsky,et al.  1/f noise in CMOS transistors for analog applications , 2001 .

[57]  C. Menon,et al.  Enhanced Intrinsic Gain (gm/gd) of PMOSFETs with a Si , 2002, 32nd European Solid-State Device Research Conference.

[58]  A. Mercha,et al.  Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness , 2004, IEEE Transactions on Electron Devices.

[59]  Arkadiusz Szewczyk,et al.  Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics , 2001, Microelectron. Reliab..

[60]  Fang Wang,et al.  Low-frequency noise in submicrometer MOSFETs with HfO/sub 2/, HfO/sub 2//Al/sub 2/O/sub 3/ and HfAlO/sub x/ gate stacks , 2004, IEEE Transactions on Electron Devices.

[61]  Massimo V. Fischetti,et al.  Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .

[62]  L. Pantisano,et al.  Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics , 2003, IEEE Electron Device Letters.

[63]  Tsuyoshi Ishikawa,et al.  Direct evaluation of an interfacial layer in high-k gate dielectrics by 1/f noise measurements , 2003 .

[64]  D. Schroder,et al.  Impact of post-oxidation annealing on low-frequency noise, threshold voltage, and subthreshold swing of p-channel MOSFETs , 2004, IEEE Electron Device Letters.

[65]  D. J. Robbins,et al.  Near‐band‐gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon , 1992 .

[66]  Sarah H. Olsen,et al.  Design, fabrication and characterisation of strained Si/SiGe MOS transistors , 2004 .

[67]  E. Cartier,et al.  Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .

[69]  Ying-Che Tseng,et al.  Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs , 2001 .

[70]  E. Simoen,et al.  Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs , 1996 .

[71]  Eddy Simoen,et al.  Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes , 2004 .

[72]  Gerard Ghibaudo,et al.  Characterization of the effective mobility by split C(V) technique in sub 0.1 μm Si and SiGe PMOSFETs , 2005 .

[73]  G. Baccarani,et al.  Generalized scaling theory and its application to a ¼ micrometer MOSFET design , 1984, IEEE Transactions on Electron Devices.

[74]  Shinichi Takagi,et al.  Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness , 2001 .

[75]  S.-L. Zhang,et al.  A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack , 2003, IEEE Electron Device Letters.

[76]  B. Tavel,et al.  Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization? , 2005 .

[77]  Sébastien Haendler,et al.  Low frequency noise in 0.12 mum partially and fully depleted SOI technology , 2003, Microelectron. Reliab..

[78]  Jean-Pierre Colinge,et al.  Fully-depleted SOI CMOS for analog applications , 1998 .

[79]  T. Ngai,et al.  Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing , 2002 .

[80]  S. Narasimha,et al.  High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[81]  J. Kavalieros,et al.  High-/spl kappa//metal-gate stack and its MOSFET characteristics , 2004, IEEE Electron Device Letters.

[82]  A. Chou,et al.  High performance CMOS fabricated on hybrid substrate with different crystal orientations , 2003, IEEE International Electron Devices Meeting 2003.

[83]  Vivek Subramanian,et al.  Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel , 2002 .

[84]  Mikael Östling,et al.  1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs , 2003 .

[85]  G. Ghibaudo,et al.  Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films , 1996, IEEE Electron Device Letters.

[86]  L. Risch,et al.  DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-/spl mu/m technology , 1999 .

[87]  T. Ma,et al.  Temperature dependence of channel mobility in HfO/sub 2/-gated NMOSFETs , 2004, IEEE Electron Device Letters.

[88]  T. Ouisse,et al.  Ultimately thin double-gate SOI MOSFETs , 2003 .

[89]  Evan H. C. Parker,et al.  Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor , 2004 .

[90]  Mikael Östling,et al.  Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator , 2005 .

[91]  Sorin Cristoloveanu,et al.  Silicon on insulator technologies and devices: from present to future , 2001 .

[92]  M. Fritze,et al.  High-speed Schottky-barrier pMOSFET with f/sub T/=280 GHz , 2004, IEEE Electron Device Letters.

[93]  T. Ohguro,et al.  1.5-nm gate oxide CMOS on [110] surface-oriented Si substrate , 2003 .

[94]  Luigi Colombo,et al.  Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors , 2005 .

[95]  Gerard Ghibaudo,et al.  On the origin of the LF noise in Si/Ge MOSFETs , 2002 .

[96]  Nadine Collaert,et al.  High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology , 2003 .

[97]  C.W. Liu,et al.  Comprehensive low-frequency and RF noise characteristics in strained-Si NMOSFETs , 2003, IEEE International Electron Devices Meeting 2003.

[98]  Eddy Simoen,et al.  Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors , 2003 .

[99]  X. Garros,et al.  Characterization and modeling of hysteresis phenomena in high K dielectrics , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[100]  G. Braithwaite,et al.  Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise , 2001, 31st European Solid-State Device Research Conference.

[101]  T. Noguchi,et al.  Mobility improvement for 45nm node by combination of optimized stress and channel orientation design , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[102]  Willy Sansen,et al.  Geometry Dependence of 1/f Noise in n‐ and p‐channel MuGFETs , 2005 .

[103]  Jung-Suk Goo,et al.  Scalability of strained-Si nMOSFETs down to 25 nm gate length , 2003, IEEE Electron Device Letters.

[104]  Alexander A. Balandin,et al.  Noise and Fluctuations Control in Electronic Devices , 2002 .

[105]  Gijs Bosman,et al.  Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies , 2004 .

[106]  Bin Yu,et al.  FinFET scaling to 10 nm gate length , 2002, Digest. International Electron Devices Meeting,.

[107]  L. Selmi,et al.  An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[108]  M. von Haartman,et al.  Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate , 2006, IEEE Transactions on Electron Devices.

[109]  M. Ostling,et al.  Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels , 2006, IEEE Electron Device Letters.

[110]  R.H. Dennard,et al.  Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions , 1974, Proceedings of the IEEE.

[111]  S. Laux,et al.  Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .

[112]  Z. Celik-Butler,et al.  Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs , 2006, IEEE Transactions on Electron Devices.

[113]  R. Chau,et al.  A 90-nm logic technology featuring strained-silicon , 2004, IEEE Transactions on Electron Devices.

[114]  Mishel Matloubian,et al.  Low frequency noise in fully depleted SOI PMOSFET's , 1994 .

[115]  Jean-Pierre Colinge,et al.  Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs , 1990 .

[116]  K. Romanjek,et al.  Low frequency noise characterization and modelling in ultrathin oxide MOSFETs , 2006 .

[117]  S. De Gendt,et al.  The impact of sub monolayers of HfO/sub 2/ on the device performance of high-k based transistors [MOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.

[118]  Cor Claeys,et al.  Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies , 2000 .

[119]  J. Olsson,et al.  Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes , 2005, IEEE Transactions on Electron Devices.

[120]  Fang Wang,et al.  Low-frequency noise in TaSiN/HfO/sub 2/ nMOSFETs and the effect of stress-relieved preoxide interfacial layer , 2006, IEEE Transactions on Electron Devices.

[121]  E. Luckowski,et al.  Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[122]  L. Selmi,et al.  Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs , 2003 .

[123]  Ognian Marinov,et al.  A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs , 2002 .

[124]  M. Zoaeter,et al.  Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs , 2002, Microelectron. Reliab..

[125]  Ga-Won Lee,et al.  Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method , 2002 .

[126]  Eddy Simoen,et al.  A low-frequency noise study of gate-all-around SOI transistors , 1993 .

[127]  E. Simoen,et al.  Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates , 2006, IEEE Transactions on Electron Devices.

[128]  Eddy Simoen,et al.  Tunneling 1/ f ? noise in 5 nm HfO 2/2.1 nm SiO 2 gate stack n-MOSFETs , 2005 .

[129]  K. Yeo,et al.  Effect of technology scaling on the 1/f noise of deep submicron PMOS transistors , 2004 .

[130]  Daniel M. Fleetwood,et al.  Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks , 2003 .

[131]  D. Harame,et al.  SiGe-channel heterojunction p-MOSFET's , 1994 .

[132]  Shinichi Takagi,et al.  Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction , 2001 .

[133]  C. Ciofi,et al.  Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics , 2006, IEEE Transactions on Electron Devices.

[134]  J. Bokor,et al.  Low-frequency noise characteristics in p-channel FinFETs , 2002, IEEE Electron Device Letters.

[135]  H.-S.P. Wong,et al.  Extreme scaling with ultra-thin Si channel MOSFETs , 2002, Digest. International Electron Devices Meeting,.

[136]  X. Garros,et al.  75 nm damascene metal gate and high-k integration for advanced CMOS devices , 2002, Digest. International Electron Devices Meeting,.

[137]  Eddy Simoen,et al.  Low-Frequency Noise Performance of HfO2-Based Gate Stacks , 2005 .

[138]  Cor Claeys,et al.  1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates , 2006 .

[139]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[140]  Mikael Östling,et al.  Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain , 2005 .

[141]  H. Nayfeh,et al.  Strained silicon MOSFET technology , 2002, Digest. International Electron Devices Meeting,.

[142]  Eddy Simoen,et al.  Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS , 2001, Microelectron. Reliab..

[143]  Stephane Monfray,et al.  Emerging silicon-on-nothing (SON) devices technology , 2004 .

[144]  K. Akarvardar,et al.  Low-frequency noise in SOI four-gate transistors , 2006, IEEE Transactions on Electron Devices.

[145]  R. Thewes,et al.  Fluctuations of the low frequency noise of MOS transistors and their modeling in analog and RF-circuits , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[146]  J. M. McGregor,et al.  Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys , 1993 .

[147]  Mikael Östling,et al.  Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors , 2000 .

[148]  T. Skotnicki,et al.  Multiple SiGe well: a new channel architecture for improving both NMOS and PMOS performances , 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

[149]  F.L. Terry,et al.  IVB-2 Inversion layer mobility of MOSFET's with Nitrided Oxide gate dielectrics , 1985, IEEE Transactions on Electron Devices.

[150]  P. Solomon,et al.  Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness , 2003 .

[151]  J. Bokor,et al.  Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate , 2003, IEEE Electron Device Letters.

[152]  Eddy Simoen,et al.  Gate electrode effects on low-frequency (1/ f) noise in p-MOSFETs with high-? dielectrics , 2006 .

[153]  Eddy Simoen,et al.  Impact of Gate Material on Low‐frequency Noise of nMOSFETs with 1.5 nm SiON Gate Dielectric: Testing the Limits of the Number Fluctuations Theory , 2005 .

[154]  Gijs Bosman,et al.  Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs , 2002 .

[155]  Cor Claeys,et al.  The low-frequency noise behaviour of silicon-on-insulator technologies , 1996 .