High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers

Strained‐layer In0.35Ga0.65As‐GaAs‐AlGaAs graded index separate confinement heterostructure multiple quantum well lasers were grown by molecular beam epitaxy and processed as ridge waveguide structures. Devices with 3 μm×200 μm cavities have threshold currents of 18 mA (3000 A/cm2) and optical waveguide losses of 4.2 cm−1. The microwave modulation bandwidth of a 3 μm×200 μm device was determined to be 19.5 GHz, which exceeds the 15.5 GHz reported for multimode index‐guided devices, and is the highest direct modulation bandwidth reported for a quantum well laser.

[1]  Effect of strain on the band structure of GaAs and In0.2Ga0.8As , 1988 .

[2]  N. Sugiyama,et al.  Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers , 1988 .

[3]  Lester F. Eastman,et al.  Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy , 1989 .

[4]  L. Eastman,et al.  Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation , 1991 .

[5]  B. Ridley.  The in‐plane effective mass in strained‐layer quantum wells , 1990 .

[6]  J. LaCourse,et al.  Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancem , 1990 .

[7]  Eli Yablonovitch,et al.  Reduction of lasing threshold current density by the lowering of valence band effective mass , 1986 .

[8]  L. A. Coldren,et al.  Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .

[9]  P. Tasker,et al.  Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers , 1990, IEEE Photonics Technology Letters.

[10]  A. R. Adams,et al.  Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .

[11]  J. Eom,et al.  The relation of doping level to K factor and the effect on ultimate modulation performance of semiconductor lasers , 1990, IEEE Photonics Technology Letters.