Vibrational spectroscopy of low-k/ultra-low-k dielectric materials on patterned wafers

Comparing with much valuable research on vibrational spectroscopy on low-k dielectrics in different substrates, this paper investigates the vibrational spectroscopy of low-k and ultra-low-k dielectric materials on patterned wafers. It is found that both Raman and FTIR spectroscopy are necessary as complement to characterize low-k and ultra-low-k dielectric materials on patterned wafers. Significant differences in the Raman and FTIR spectra between low-k and ultra-low-k dielectric materials are also observed. Moreover, Raman spectroscopy has an advantage in analyzing the mixed structure of low-k/ultra-low-k and Cu at nanometer-scaled sizes. The results in this paper show that Raman combined with FTIR spectroscopy is an effective tool to characterize dielectric thin film properties on patterned wafers.

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