Vibrational spectroscopy of low-k/ultra-low-k dielectric materials on patterned wafers
暂无分享,去创建一个
Handong Sun | Choun Pei Wong | Zexiang Shen | Z. Mo | J. Lam | Maggie Yamin Huang | Z. Mai | H. Tan
[1] S. Novak,et al. Cu penetration into low-k dielectric during deposition and bias-temperature stress , 2010 .
[2] C. Carteret,et al. Vibrational properties of polysiloxanes: from dimer to oligomers and polymers. 1. Structural and vibrational properties of hexamethyldisiloxane (CH3)3SiOSi(CH3)3 , 2010 .
[3] K. Gleason,et al. Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD) , 2010 .
[4] Willi Volksen,et al. Low dielectric constant materials. , 2010, Chemical reviews.
[5] M. Murakami,et al. Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples , 2009 .
[6] P. Ho,et al. Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics , 2008 .
[7] M. Buchmeiser,et al. Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths , 2008 .
[8] P. Ho,et al. Mechanistic study of plasma damage of low k dielectric surfaces , 2008 .
[9] G. Beyer,et al. Characterization and optimization of porogen-based PECVD deposited extreme low-k materials as a function of UV-cure time , 2007 .
[10] S. Bent,et al. Effect of radical species density and ion bombardment during ashing of extreme ultralow-κ interlevel dielectric materials , 2007 .
[11] P. Ho,et al. Effect of CH4 plasma treatment on O2 plasma ashed organosilicate low-k dielectrics , 2007 .
[12] N. Rochat,et al. Influence of electron-beam and ultraviolet treatments on low-k porous dielectrics , 2006 .
[13] E. Liniger,et al. The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics , 2006, Microelectron. Reliab..
[14] S. Raghavan,et al. Applications of Raman spectroscopy in copper chemical mechanical planarization: In situ detection of tantalum layer to dielectric layer transition , 2006 .
[15] J. Economy,et al. New High Strength Low-k Spin-On Thin Films for IC Application , 2006 .
[16] K. Aw,et al. Analysis of HSG-7000 silsesquioxane-based low-k dielectric hot plate curing using Raman spectroscopy , 2006 .
[17] A. Kromka,et al. Diamond-like carbon thin films for high-temperature applications prepared by filtered pulsed laser deposition , 2005 .
[18] Reza Ghodssi,et al. Integration of benzocyclobutene polymers and silicon micromachined structures using anisotropic wet etching , 2004 .
[19] M. D. Moraes,et al. Infrared and Raman studies on films of organosiloxane networks produced by PECVD , 2004 .
[20] C. K. Inoki,et al. Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C4F8 and C4F8/Ar gas mixtures , 2004 .
[21] A. Grill,et al. Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization , 2003 .
[22] Karen Maex,et al. Low dielectric constant materials for microelectronics , 2003 .
[23] K. Gleason,et al. Plasma-enhanced chemical vapor deposition of low-k dielectric films using methylsilane, dimethylsilane, and trimethylsilane precursors , 2003 .
[24] Alfred Grill,et al. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition , 2001 .
[25] Tatsuo Shimizu,et al. Crystallization process in tetrahedrally bonded binary amorphous semiconductors , 1983 .
[26] H. Ehrenreich,et al. Optical Properties of Ag and Cu , 1962 .