Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design

[1]  K. Hjort.  Sacrificial etching of III-V compounds for micromechanical devices : Sacrificial etching papers , 1996 .

[2]  Bernard Courtois,et al.  Collective fabrication of gallium-arsenide-based microsystems , 1996, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.

[3]  Hans L. Hartnagel,et al.  Infrared thermopile sensor based on AlGaAs—GasAs micromachining , 1995 .

[4]  Y. Uenishi,et al.  Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining , 1994 .

[5]  The piezoelectric effect of GaAs used for resonators and resonant sensors , 1994 .

[6]  Jan Söderkvist,et al.  Gallium arsenide as a mechanical material , 1994 .

[7]  M. Dagenais,et al.  Etch Characteristics of Succinic Acid/Ammonia/Hydrogen Peroxide versus Aluminum Mole Fraction in AlGaAs , 1993 .

[8]  A. Abidi,et al.  Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier , 1993, IEEE Electron Device Letters.

[9]  T. Takebe,et al.  Fundamental Selective Etching Characteristics of HF + H 2 O 2 + H 2 O Mixtures for GaAs , 1993 .

[10]  G. Desalvo,et al.  Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP , 1992 .

[11]  M.E. Goldfarb,et al.  The effect of air bridge height on the propagation characteristics of microstrip , 1991, IEEE Microwave and Guided Wave Letters.

[12]  Voitech Stankevic,et al.  AlGaAs semiconductor pressure sensors , 1991 .

[13]  D. Shaw,et al.  Localized GaAs Etching with Acidic Hydrogen Peroxide Solutions , 1981 .

[14]  Y. Mori,et al.  A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its Kinetics , 1978 .

[15]  D. Rode,et al.  {332} Ga Habit Planes Formed on GaAs during Br2 : CH 3 OH Etching , 1975 .

[16]  J. Gannon,et al.  A Chemical Etchant for the Selective Removal of GaAs Through SiO2 Masks , 1974 .

[17]  Kazuhiro Ito,et al.  Selective Etching of Gallium Arsenide Crystals in H 2 SO 4 ‐ H 2 O 2 ‐ H 2 O System , 1971 .

[18]  Yasoo Harada,et al.  Preferential Etching and Etched Profile of GaAs , 1971 .