A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS

This paper presents a 38 GHz 2-stage harmonic-tuned power amplifier consisted of a class-F<sup>-1</sup> output power amplifier proceeded by a class-AB driving stage in 0.13 μm SiGe BiCMOS technology. In order to shape highly efficient class-F<sup>-1</sup> current and voltage waveforms, the PA adopts multi-resonance series and parallel load networks that modulate load impedance to generate an optimum 50-Ω for signal band, high impedance at the 2<sup>nd</sup> harmonic band and low impedance at the 3<sup>rd</sup> harmonic band. Inter-stage matching between the driver and output stage is also applied to deliver optimal power to the output stage with a maximum PAE, resulting in 38.5% of peak PAE with 50 mW P<sub>sat</sub> at 38 GHz, which is one of the highest PAEs in silicon technology at mm-wave. The chip size is 0.9×0.55 μm<sup>2</sup> including all pads.

[1]  Brian Floyd,et al.  A 28-GHz class-J Power Amplifier with 18-dBm output power and 35% peak PAE in 120-nm SiGe BiCMOS , 2014, 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems.

[2]  Hossein Hashemi,et al.  Performance Limits, Design and Implementation of mm-Wave SiGe HBT Class-E and Stacked Class-E Power Amplifiers , 2014, IEEE Journal of Solid-State Circuits.

[3]  P. Cochat,et al.  Et al , 2008, Archives de pediatrie : organe officiel de la Societe francaise de pediatrie.

[4]  Theodore S. Rappaport,et al.  Millimeter Wave Mobile Communications for 5G Cellular: It Will Work! , 2013, IEEE Access.

[5]  Kwang-Jin Koh,et al.  14.4 A Class F-1/F 24-to-31GHz power amplifier with 40.7% peak PAE, 15dBm OP1dB, and 50mW Psat in 0.13μm SiGe BiCMOS , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).