Sorption and gas sensitive properties of In2O3 based ceramics doped with Ga2O3

Abstract The process of structure formation in In 2 O 3 based ceramics doped with Ga 2 O 3 was investigated. The data obtained demonstrated the profound influence of Ga-dopands both on the crystallization path of solids produced by coprecipitation and on their final physical and electrical properties. The limited solubility of Ga 2 O 3 dopands in cubic In 2 O 3 lattice which lies within the 11–12 wt% was also noted. Ga 2 O 3 -dopands caused the formation of a porous structure in the In 2 O 3 -based ceramics, providing an active interaction surface in the semiconductor for reducing gases. Ga-doped ceramics demonstrated better gas sensor properties then pure In 2 O 3 .