Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium

A detailed study of the atomic layer deposition of Al2O3 on Ru film surfaces by means of in situ photoelectron spectroscopy has been carried out. We discuss how the atomic layer deposition reaction between trimethylaluminum (TMA) and H2O is affected by the Ru substrate. We found that RuO2, when present on the substrate surface, participates in the reaction with TMA and the substrate reduces to Ru. The reduction of oxygen-containing substrates to Ru is solely due to the direct reaction of the Al precursor with the substrate through adsorption on active sites. The final Al2O3/Ru structures have an interface depleted from oxygen and show different band offsets depending on the initial chemistry.

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