Nanoelectronic coupled problem solutions: uncertainty quantification of RFIC interference

Due to the key trends on the market of RF products, modern electronics systems involved in communication and identification sensing technology impose requiring constraints on both reliability and robustness of components. The increasing integration of various systems on a single die yields various on-chip coupling effects, which need to be investigated in the early design phases of Radio Frequency Integrated Circuit (RFIC) products. Influence of manufacturing tolerances within the continuous down-scaling process affects the output characteristics of electronic devices. Consequently, this results in a random formulation of a direct problem, whose solution leads to robust and reliable simulations of electronics products. Therein, the statistical information can be included by a response surface model, obtained by the Stochastic Collocation Method (SCM) with Polynomial Chaos (PC). In particular, special emphasis is given to both the means of the gradient of the output characteristics with respect to parameter variations and to the variance-based sensitivity, which allows for quantifying impact of particular parameters to the variance. We present results for the Uncertainty Quantification of an integrated RFCMOS transceiver design.