Excitation Mechanisms and Light Emitting Device Performances in Er-Doped Crystalline Si

[1]  A. Polman,et al.  Materials issues and device performances for light emitting Er-implanted Si , 1995 .

[2]  F. Priolo,et al.  The effects of oxygen and defects on the deep‐level properties of Er in crystalline Si , 1995 .

[3]  Sebania Libertino,et al.  The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon , 1995 .

[4]  S. U. Campisano,et al.  Erbium in oxygen‐doped silicon: Electroluminescence , 1995 .

[5]  A. Polman,et al.  Segregation and trapping of erbium during silicon molecular beam epitaxy , 1995 .

[6]  G. N. van den Hoven,et al.  Erbium in crystal silicon: Optical activation, excitation, and concentration limits , 1995 .

[7]  G. Hendorfer,et al.  On the local structure of optically active Er centers in Si , 1995 .

[8]  Polman,et al.  Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si. , 1994, Physical review. B, Condensed matter.

[9]  J. Poate,et al.  Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode , 1994 .

[10]  Alberto Carnera,et al.  Room‐temperature electroluminescence from Er‐doped crystalline Si , 1994 .

[11]  F. Priolo,et al.  Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects , 1993 .

[12]  F. Priolo,et al.  Optical activation and excitation mechanisms of Er implanted in Si. , 1993, Physical review. B, Condensed matter.

[13]  L. Kimerling,et al.  The mechanisms of electronic excitation of rare earth impurities in semiconductors , 1993 .

[14]  R. Feuerstein,et al.  Electrically Pumped Rare Earth Doped Semiconductor Lasers , 1993 .

[15]  P. H. Citrin,et al.  Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si , 1992 .

[16]  Jurgen Michel,et al.  Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon , 1991 .

[17]  M. Salvi,et al.  Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities , 1990 .

[18]  A. Axmann,et al.  1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy , 1985 .

[19]  W. Haecker,et al.  Infrared radiation from breakdown plasmas in Si, GaSb, and Ge: Evidence for direct free hole radiation , 1974 .

[20]  A. G. Chynoweth,et al.  Internal Field Emission in Silicon p-n Junctions , 1957 .