Capacitances in double-barrier tunneling structures

Capacitances in a double-barrier tunneling structure are calculated for the specific sequential electron tunneling regime. Starting from Luryi's (1988) definition of quantum capacitance, the authors model the charge accumulation in the well during the tunneling process using the Fermi-Dirac distribution. Analytical formulas for the total capacitance and conductance are derived. A complete small-signal model is proposed that demonstrates the external capacitance and conductance of the structure and its frequency behavior. The authors show both theoretically and experimentally that the capacitance in a tunneling structure is both bias- and frequency-dependent. >

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