650 nm lasers with narrow far-field divergence
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P. Smowton | G. Berry | C. Button | H. Summers | P. Blood
[1] S. Chang,et al. Design of AlGaInP visible lasers with a low vertical divergence angle , 1998 .
[2] P. Smowton,et al. Self-consistent simulation of (AlGa)InP/GaInP visible lasers , 1997 .
[3] P. Smowton,et al. Visible emitting (AlGa)InP laser diodes , 1997 .
[4] P. Smowton,et al. GaInP-(Al/sub y/Ga/sub 1-y/)InP 670 nm quantum-well lasers for high-temperature operation , 1995 .
[5] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[6] Katsumi Kishino,et al. Refractive indices measurement of (GaInP)m/(AlInP)n quasi‐quaternaries and GaInP/AlInP multiple quantum wells , 1994 .
[7] Ferdinand Scholz,et al. Refractive index of (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy , 1994 .
[8] R. G. Waters,et al. Single quantum well laser with vertically integrated passive waveguides , 1990 .
[9] Martin A. Afromowitz,et al. Refractive index of Ga1−xAlxAs , 1974 .